| 摘要 |
PURPOSE:To realize a high efficiency and high output operation by a method wherein both sides of a mesa stripe containing an active layer are filled with P-type InP and N-type InP and further InGaAsP layers which has composition different from the active layer are buried between a substrate and the filling layers. CONSTITUTION:N-type InP 2, In1-zGazAs1-uPu 3 and P-type InP 4 are successively deposited on a (100) N-type InP substrate 1 by liquid phase position. An SiO2 mask 5 is formed on this laminated structure and the P-type InP 4 is etched by hydrochloric acid. After that the InGaAsP 3 is etched by mixed solution of fluoric acid and nitric acid to form a stripe groove. N-type InP 6, InGaAsP 7 for an active layer, P-type InP 8 and P-type InGaAsP 9 are successively deposited by the second liquid phase deposition. After a stripe mask composed of an SiO2 film 10 with the width of 5mum is formed on the substrate, mesa etching, reaching the P-type InP 4, is carried out. P-type InP 11 and N-type InP 12 are deposited on both sides of the mesa structure by liquid phase deposition. After the SiO2 film 10 on the wafer is removed, electrodes are formed on the P-type side and the N-type side with Ti/Pt/Au and Au-Sn respectively. A laser diode can be formed by cleaving so as to provide a resonator length of 300mum.
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