| 摘要 |
PURPOSE:To avoid instability caused by a pressure needle positioned on the exposed part of an emitter-base junction and suppress the increase of a leakage current by a method wherein the emitter-base junction is so formed as to have its end part in a groove formed in one of the surfaces of a semiconductor substrate and the inside surface of the groove is covered with insulating layers and the pressure needle is contacted with the surface. CONSTITUTION:After a base region 2 and an emitter region 3 are formed in a substrate 10 by a conventional planar technology, an annular SiO2 insulating layer 5 is formed along the emitter-base junction by selective oxidation. Therefore, the emitter-base junction ends at the bottom of this insulating layer. The surface of the SiO2 layer 5 has the same level as the substrate surface for forming a wiring on it. With this constitution, even if a pressure needle 4 is shifted and positioned directly above the emitter-base junction, the needle does not press the emitter-base junction directly so that the sudden change of the sensitivity can be avoided and, as the junction is protected by the insulating layer 5, the increase of a leakage current can be also avoided.
|
