| 摘要 |
PURPOSE:To obtain an etching mirror laser whose two end surfaces are approximately vertical and realize the characteristics which are by no means inferior to the characteristics of a laser with mirrors formed by cleaving and, moreover, eliminate a cleaving process by a method wherein the end surface of a resonator are formed by inclining the junction plane of a P-N junction against the direction of ion beam irradiation. CONSTITUTION:A specimen is placed aslant to have an inclination angle theta1 of 40-50 deg. and the one side of an etching mask 1 is held vertically to the direction of ion beam application and inclined etching is carried out to form the 1st end surface with a steep angle of about 90 deg. (vertical). After the steep 1st end surface is protected by the 2nd etching mask 8 (TiO2), the specimen is inclined to have the 2nd inclination angle theta2 of 40-50 deg. to the direction opposite to a 1st inclination angle theta1 to make the other end surface a steep 2nd surface so that the vertical etched surfaces can be obtained at both ends. A semiconductor laser device which is obtained like this and has vertical etched surfaces at both ends shows excellent characteristics.
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