| 摘要 |
PURPOSE:To suppress the temperature rise inside a diode and facilitate higher intensity emission by a method wherein specific shapes and dimensions are given to a base and a chip and the light emitted from the sides of the chip is guided upward. CONSTITUTION:A mortar-shape hole is provided at the center of a top surface. The diameter of the bottom of the hole is 410mum, the depth of the hole is 250mum and the diameter of the opening of the hole is 710mum. Gold plating is applied to the slope of the hole to form a reflective surface 4a. A light emitting diode chip 1 is worked into an octagon whose sides are slightly inclined to make the area of the top surface a little smaller than the area of the bottom. The distance between the parallel sides of the bottom is 375mum, the distance between the parallel sides of the top is 360mum and the thickness is 150mum. The reason why the shape of the light emitting diode chip is made to be polygonal is to make the area of a P-N junction larger and to make the light reflected by the slope of the mortar-shape hole uniform. |
