| 摘要 |
PURPOSE:To prevent a significant fluctuations in relative position of a semiconductor chip and the inner lead of a package by a method wherein a fused low melting point glass layer is formed by burying the fixed part of a lead frame, and a ceramic cap is welded on the fused low melting point glass layer using a low melting point glass layer. CONSTITUTION:A powdery low melting point glass aggregate layer, an unfused low melting point glass layer in other words, is formed on the upper surface of a ceramic base 1, a lead frame 3 is mounted thereon, the low melting point glass is fused, and the ceramic base 1 and the lead frame 3 are adhered to an inner lead part 4. Then, an unused low melting point glass layer 114 is formed on the cap sealing region of the ceramic base 1. Subsequently, said unfused low melting point glass layer 114 is once fused, and a thick fused low melting point glass layer 14 having a fusion hysteresis is formed. Then, after an IC chip 11 has been adhered to the chip stage 8 of a chip mounting groove 7, a wire bonding is performed. Then, a ceramic cap 9, whereon an unfused low melting point glass layer 110 is formed on the sealing part, is applied and welded on the lead-attached base on which a chip mounting work is completed. |
