| 摘要 |
PURPOSE:To easily differentiate the surface potentials of electrode transfer channel below respective transfer electrodes between respective transfer electrodes without increasing processes by a method wherein gate oxide film only is formed below the first transfer electrodes while forming the gate oxide film and a gate nitride film below the second transfer electrodes. CONSTITUTION:A gate oxide film 2 and a polysilicon film 3 are formed on the surface of substrate 1. First, multiple resist film patterns 5a are formed to form the first transfer electrodes 3a by selectively etching the polysilicon film 3 using the resist film patterns 5a as masks. Second, the resist film patterns 5a are removed to form an oxide film 4 by thermooxidizing the surface of the first electrodes 3a. Later a nitride film 6 is formed on the exposed surface of gate oxide film 2 and the surface of oxide film 4 by ECR type PECVD device further continuously forming an amorphous silicon film 7 on the surface of nitride film 6. Third, the amorphous silicon film 7 and the nitride film 6 are seccessively and selectively dryetched to form the second transfer electrodes 7a and a gate nitride films 6a using resist film patterns 8a as masks. Finally, the resist film patterns 8a are removed to form a two phase driving charge transfer device.
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