| 摘要 |
PURPOSE:To prevent the exfoliation of a high melting point metal silicide film by a method wherein the titanium of 30% or less is contained in the target consisting of a high melting point metal silicide alloy, and the electrode wiring of a semiconductor integrated circuit device is formed by deposition by performing a sputtering method using said target. CONSTITUTION:A silicon oxide film 2 is formed on the surface of a substrate as a gate insulating film, and a polycrystalline silicon film 3 is grown thereon by performing a chemical vapor deposition (CVD) method. Besides, a tungsten silicide film 4 is coated thereon using a sputtering method. At this time, a tungsten silicide alloy is used as a target, and in this case, the material containing 10% of titanium is contained in said target. Then, a photoresist 5 is patterned in gate electrode form on the target by performing a photolithographic method, and an etching is performed on the high melting point metal silicide film 4 and the polycrystalline silicon film 3 using the photoresist 5 as a mask. As a result, the gate electrode 6 of the double structure of the polycrystalline silicon film 3 and the high melting point metal silicide film 4, namely, a silicide structure, can be formed.
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