| 摘要 |
A coherent metal layer is deposited on a substrate. Simultaneously particles of semiconductor material, which are capable of alloying with the metal, are incorporated in the metal layer. The deposition is effected from a suspension, which is produced by suspending the particles of the semiconductor material in a fluid, and at a temperature lower than that at which the metal and the particle semiconductor material alloy together. Heating alloys together the metal and the particle semiconductor material. The metal layer may be applied by electrodeposition, by electroless deposition or with the aid of a gravitational effect. The metal deposited may be gold or silver. The particles of semiconductor material may be of silicon, germanium or gallium arsenide. Doping agents secuh as borom may bed used. IUt is possible to apply a thin metal layer, followed by simultaneous deposition of metal and semiconductor material. Then pure metal could again be applied. |
