BONDING WIRE FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE:To improve the heat resistance, rupture strength and bonding characteristics by adding a very small amount of one or more among Cd, Pb and Ti to pure Cu having a regulated S content. CONSTITUTION:A bonding wire for a semiconductor device is made of a material obtd. by adding <=0.02% one or more among Cd, Pb and Ti to Cu having >=99.999% purity and <=0.0005wt% S content. By this composition, the bonding wire has bonding characteristics comparable to those of a fine pure gold wire and also has superior heat resistance and rupture strength, so it is applicable to high-speed automatic bonding.