Electrophotographic member having multilayered amorphous silicon photosensitive member

摘要

PCT No. PCT/JP84/00598 Sec. 371 Date Dec. 16, 1985 Sec. 102(e) Date Dec. 16, 1985 PCT Filed Dec. 14, 1984 PCT Pub. No. WO85/02691 PCT Pub. Date Jun. 20, 1985.The invention relates to an electrophotographic member which is highly sensitive to the light of long wavelengths. Amorphous silicon is used as a photosensitive base member. A long wavelength sensitizing region has a narrower forbidden band gap width than that of the base member, and consists of at least two semiconductor films that are laminated and that have at least different forbidden band gap widths or different conductivities. An increased number of semiconductor films may, of course, be laminated to constitute the sensitizing region.