发明名称 |
Method for control of etch profile |
摘要 |
A method for precisely controlling the profile of an opening etched in a layer of material, for example, an insulating layer. In one embodiment, wherein a silicon dioxide layer is reactive ion etched through a photoresist mask, the concentration of a reactive species in an etchant gas is changed during the etching process to change the slope of the opening, the upper sidewall portion of the opening having a shallow slope and the lower sidewall portion of the opening having a steep slope. The final slope of the opening formed by this method is independent of the initial slopes of the images developed in the photoresist mask.
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申请公布号 |
US4671849(A) |
申请公布日期 |
1987.06.09 |
申请号 |
US19850730976 |
申请日期 |
1985.05.06 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHEN, LEE;MATHAD, GANGADHARA S. |
分类号 |
H01L21/302;H01L21/3065;H01L21/311;(IPC1-7):H01L21/308;C23F1/02 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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