发明名称 |
Integrated circuit structure having conductive, protective layer for multilayer metallization to permit reworking |
摘要 |
An improved integrated circuit structure, and method of making the structure, is disclosed wherein at least one metallization layer is coated during production of the structure with a conductive layer capable of withstanding metal removal means, and an upper metallization layer is subsequently applied to the structure. At least a portion of the subsequent metallization layer is in ohmic contact with the conductive layer and the lower metallization layer is protected by the intervening conductive layer during subsequent removal of the upper metallization layer if subsequent reworking of the structure becomes necessary. In a preferred embodiment, the use of the conductive layer over a metallization layer further enhances the construction process during patterning of a photoresist applied over the conductive layer by the use of a conductive material having antireflective properties.
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申请公布号 |
US4672420(A) |
申请公布日期 |
1987.06.09 |
申请号 |
US19850722957 |
申请日期 |
1985.04.12 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
BORODOVSKY, YAN;THOMAS, MAMMEN;MA, DANNY |
分类号 |
H01L23/52;H01L21/3205;H01L21/60;H01L23/525;H01L23/532;(IPC1-7):H01L23/14;H01L23/54 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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