发明名称 |
Nonvolatile semiconductor memory device |
摘要 |
A nonvolatile semiconductor memory device including at least one memory cell which comprises a floating-gate, a control gate and a single impurity diffusion region formed exclusively for the memory cell. In this device, a small depletion region and a large depletion region due to the charged and discharged state of the floating-gate represent the information "1" and "0". |
申请公布号 |
US4672409(A) |
申请公布日期 |
1987.06.09 |
申请号 |
US19850746452 |
申请日期 |
1985.06.19 |
申请人 |
FUJITSU LIMITED |
发明人 |
TAKEI, AKIRA;HIKA, YOSHIHIKO;MIIDA, TAKASHI |
分类号 |
H01L21/8239;H01L29/788;H01L29/861;(IPC1-7):H01L29/78;G11C11/40;H01L29/04;H01L29/34 |
主分类号 |
H01L21/8239 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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