发明名称 VAPOR GROWTH APPARATUS
摘要 PURPOSE:To remove crystal of sublimable substance stuck on a laser light transmitting window and to effectively perform irradiation of laser light by providing a heating means to the laser light transmitting window in a vapor growth apparatus (chemical vapor deposition) wherein the sublimable substance is made to a material. CONSTITUTION:A photomask 1 provided to a reaction vessel 2 is positioned so that a laser light 11 can be irradiated on the chipped defective positions of the photomask 1 through a transmitting window 7 by means of a lens 10. Sublimable bis(benzene) chromium (BBC) 4 is heated with a heater 3 and sublimated as a raw material of chemical vapor deposition gas for Cr deposition which is a pattern material of the photomask 1 and introduced into the inside of the reaction vessel 2 through a valve 5 and a Cr film is deposited in the chipped defective positions by pyrolytically decomposing BBC. In this case, sublimated crystal of BBC is stuck on the inside of the cooled transmitting window 7 and thereby the transmittance of laser light is reduced. The crystal of BBC stuck on the transmitting window 7 is sublimated and removed by heating the transmitting window 7 with a heating wire, heated air or an infrared lamp or providing a coating which heats the window by absorbing slightly laser light to the transmitting window in order to prevent it.
申请公布号 JPS62127469(A) 申请公布日期 1987.06.09
申请号 JP19850264789 申请日期 1985.11.27
申请人 HITACHI LTD 发明人 FUKUZAWA KUNIYUKI;HONGO MIKIO;MIYAUCHI TAKEOKI;AZUMA JUNZO;MIZUKOSHI KATSURO
分类号 H01L21/285;C23C16/48;H01L21/027;H01L21/205;H01L21/30 主分类号 H01L21/285
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