Method of forming suspended gate, chemically sensitive field-effect transistor

摘要

A method is disclosed for forming a chemically sensitive field-effect transistor having a suspended gate which enables the uniform and reproducible manufacture of such devices. Controlled uniformity and device response is provided by this method which makes the field-effect transistors suitable for use as sensors, alarms and analyzers for gases. A method of regenerating a chemically sensitive field-effect transistor having a suspended gate is also disclosed.