| 摘要 |
PURPOSE:To decrease capacitance between a wiring and an LSI substrate, by forming a region, whose conductivity type is reverse with respect to a region beneath a wiring region at the surface part of said region, and adding a new capacitor between the wiring and the LSI substrate in series. CONSTITUTION:In an LSI structure, an N-type diffused layer 7 or a P-type diffused layer are spread beneath a field oxide film 6 below a wiring region 3. On the surface of the diffused layer, an N-type layer 7 and the P-type layer 8 are formed. Thus the effect for reducing the capacitance between the wiring 3 and a substrate 5 is obtained. The N-type layer 7 can be formed at the same time when the N<+> source and drain diffused layers 9 of a transistor 2 are formed in manufacturing processes. Therefore, defects such as compexity of the manufacturing processes and the like are not yielded.
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