| 摘要 |
PURPOSE:To make it possible to reduce the area of a transistor at a part, where a large current is required to flow, by providing grooves in an island region of a substrate surrounded by a field insulating film, providing a gate electrode on the inner surfaces through a gate insulating film, and providing source and drain regions to that at least of the regions are located on the inner surfaces of the grooves. CONSTITUTION:On the surface of a semiconductor substrate 11, a field insulating film 12 is formed. Grooves 13 are formed in an island region of a substrate 11 surrounded by the field insulating film 12. On the inner surfaces of the grooves 13, a gate electrode 17 is formed through a gate insulating film 16. Source and drain regions 14 and 15 are formed so that at least parts of the regions are located on the inner surfaces of the grooves 13. The source and drain regions 14 and 15 are formed by, e.g., introducing impurities in the island regions with said gate electrode 17 as a mask. Thus, the side surface of the grooves are used as a part of a channel width and the effective channel width is increased. Therefore, the area of a transistor at a part, where a large current is required to flow, can be reduced. |
