MANUFACTURE OF SOI SUBSTRATE

摘要

PURPOSE:To permit the formation of a single crystal silicon solid phase epitaxial layer having a thickness of 1mum or less and also, very little laminating fault on the insulator single crystal layer by constituting the seed layer of discontinuously independent insular single crystal silicon. CONSTITUTION:A magnesia-spinel layer 13 with a thickness of about 0.2[mum] or thereabouts is grown on a silicon bulk layer 11 by applying a VPE method. A silicon dioxide film 12 having a thickness of about 0.6[mum] or thereabouts is formed on a surface of the silicon bulk layer 11 by applying a thermal oxidation method leaving intact the magnesia-spinel layer 13. A seed layer 14 consisting of discontinuously independent insular single crystal silicon films 14A is grown by applying a VPE method. An amorphous silicon layer is grown on the seed layer 14 in a thickness of about 0.6[mum] or thereabouts by applying a VPE method. A heat treatment is performed at a temperature of about 1,030[ deg.C] or thereabouts for about 20[min] in an atmosphere of hydrogen and the above amorphous silicon layer is converted into a single crystal silicon SPE layer 15.