| 摘要 |
PURPOSE:To obtain a charge transfer device, which is driven in two phases and do not require step parts in an insulating film, by forming the insulating film on a semiconductor substrate, and forming gate electrodes, which are formed with metals having different work functions or combination of semiconductors. CONSTITUTION:On an insulating film 2 formed on a semiconductor substrate 1, gate electrodes 7 and 8 for charge transfer, which are formed by metals having different work functions or combination of semiconductors and are electrically insulated, are provided. For example, on the gate insulating film 2, first layer gate electrode 7 and second layer gate electrode 8, which apply voltages required for forming potential wells, are alternately formed. Electric charge is stored in the semiconductor substrate 1 from the potential wells. An insulating film 9 for isolating the gate electrodes are formed between the first layer gate electrode 7 and the second layer gate electrode 8 on the insulating film 2. The first layer gate electrode 7 and the second layer gate electrode 8 are formed with polycrystalline silicon films. The electrodes are formed by N-type polycrystalline silicon regions 10 and P-type polycrystalline silicon regions 11 by ion implantation method and the like.
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