发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To decrease the effect of parasitic capacitance on the potentials of wirings relatively and to decrease a distance between the wirings and the area of the wirings with erroneous operations of elements being avoided, by providing conductors, which are connected to a fixed potential in an insulator, and forming capacitors between said conductors and the conductor wirings. CONSTITUTION:A pair of conductor wirings 15 and 16 is connected to a power source 20 through the channels of P-MOSs T18 and T19 and grounded through the channels of N-MOSs T21 and T22. Namely, the conductor wiring 15 is connected to the drain sides of the P-MOS T18 and the N-MOS T21. Meanwhile, the conductor wiring 16 is connected to the drain sides of the P-MOS T19 and the N-MOS T22. In the gates of the P-MOSs T18 and T19, a clock signal PHI2 is inputted. Input signals I3 and I4 are inputted to the gate of the N-MOSs T21 and T22. A capacitor C3 is formed between a pair of the conductor wirings 15 and 16 at this time. Capacitors are also formed between the conductor wirings 15 and 16 and the conductor wiring 13.
申请公布号 JPS62126652(A) 申请公布日期 1987.06.08
申请号 JP19850267732 申请日期 1985.11.27
申请人 NEC IC MICROCOMPUT SYST LTD 发明人 TERUI HIROSHI
分类号 H01L21/8234;H01L21/768;H01L23/522;H01L27/08;H01L27/088 主分类号 H01L21/8234
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