| 摘要 |
PURPOSE:To form a gate length shorter than a hole width of a photoresist by inclining and dry etching a semiconductor substrate covered with an insulating film, narrowing the width of a recess hole as seen from a normal line, and then adding a gate metal. CONSTITUTION:An oxide film 2 is grown on a semiconductor substrate 1, a nitride film 3 is further grown thereon, a photoresist 5 coated, exposed and developed on the wafer formed with the insulating film to form a photoresist 5 having a hole. Then, the wafer is inclined in an anisotropically dry etching direction, anisotropically dry etched to etch the film 3 to form a hole different from the hole of the photoresist in the film 3. The film 2 is removed by set etching until arriving at the substrate 1, a recess is formed on the substrate 1 by etching, anodic oxidation method, and with the film 3 as a mask a gate metal 4 is added in the recess by a depositing method. Thus, an MESFET having a short gate length is simply manufactured.
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