| 摘要 |
PURPOSE:To prevent the generation of insufficient etching by dipping a wafer in an etchant approximately half and generating largely moving bubbles on the surface of an etchant liquid through bubbling from the bottom. CONSTITUTION:Bubbles are generated from pipes 13a and 13b and holes 14a and 14b through etching, a large number of large bubbles 15 are also formed on the level of an etchant 12, and bubbles are generated successively from the pipes, thus gradually shifting bubbles 15 on the level upward. Accordingly, large bubbles 15 transfer along the surfaces of wafers 10, thus removing small bubbles, which are formed as the result of a chemical reaction among aluminum on the wafers and the etchant 12 and adhere on the surfaces of the wafers.
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