| 摘要 |
PURPOSE:To grow a compound semiconductor film having high quality by specifying thickness of aluminum nitride in a coating layer. CONSTITUTION:In a susceptor for the vapor growth of a semiconductor in which the upper section of a carbon base material is coated with crystalline AlN precipitated from the vapor phase, the thickness of AlN in a coating layer is brought to 5-300mum. When the thickness of the AlN coating layer is less than 5mum, the thickness of the coating layer must be brought to at least 5mum or more in order to prevent an impurity diffusion from base-material carbon because the compactness of the coating layer is not sufficient. When the coating layer is made too thick, cracks are easy to be generated when the susceptor is used repeatedly. The thickness of the AlN coating layer must be brought to 300mum or less in order to bring repeated lifetimes as the susceptor to thirty times or more.
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