| 摘要 |
PURPOSE:To enable an oblique etching of a film to be etched by providing steps of forming a resist of organic series on the film to be etched, forming a hole in the resist, and dry etching the film to be etched through the hole. CONSTITUTION:A film 13 to be etched and containing N is formed on a semiconductor substrate 11, a resist 14 of organic series is further formed, and an opening 15 is formed in the resist 14. Then, when an SixNy film 13 and an SiO2 film 12 are etched at a high speed through the hole 15 of the resist 14 by reactive ion etching using CHF3, N2 is produced as a reactive product during etching of the film 13. N2 reacts with the resist 14 to erode the resist 14, and the opening 15 is enlarged in a tapered shape as the etching advances. Thus, the film 13 is obliquely etched to form a tapered hole 16.
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