发明名称 DRY ETCHING APPARATUS
摘要 PURPOSE:To improve controlling accuracy of an incident ion energy by setting a frequency of a high frequency power source to 20MHz or higher, and forming an output waveform of a low frequency power source to cancel a surface potential change due to storage electric amount on a substrate each other out. CONSTITUTION:When a processing chamber 1 is held at a set pressure of 10-0.01Torr and a high frequency voltage is applied by a high frequency power source 5 to an electrode 3, a plasma is generated between the electrodes 2 and 3. A high frequency current of the power source 5 is fed through the electrode 3, the plasma and the electrode 2 directly to an earth but does not pass a low pass filter 11. A signal of a low frequency signal oscillator 8 is input to a low frequency power amplifier 9, amplified, matched by a matching transformer 10, and applied through the filter 11 to the electrode 2. The frequency of the high frequency power source is set to 20MHz or higher, and a surface potential change due to a storage electric amount on a substrate is canceled by the output waveform of a low frequency power source. Thus, controlling accuracy of a substrate incident ion energy is improved to improve the processing capacity due to an increase in an etching velocity.
申请公布号 JPS62125626(A) 申请公布日期 1987.06.06
申请号 JP19850264808 申请日期 1985.11.27
申请人 HITACHI LTD 发明人 OTSUBO TORU;KAMIMURA TAKASHI
分类号 H01L21/302;H01L21/3065 主分类号 H01L21/302
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