| 摘要 |
PURPOSE:To obtain a lithography method by charged beams which can implement compensation effectively by a method wherein an actual exposure time is calculated by using the exposure time change data specified by pattern design data for reference exposure time data and is controlled by using the result of this calculation. CONSTITUTION:Drawing data are sent from a computer 14 to a beam control circuit 18 and also to an exposure time change circuit 19 through an interface 15. The exposure time change circuit 19 receives inputs of reference exposure time data To and exposure time change data A and calculates an actual exposure time. The result of calculation is supplied to the beam control circuit 18, and the beam control circuit 18 generates signals for controlling the shape and position of beams on the basis of each inputted data and controls an electrooptic specular cylinder 10 for drawing, while generating a blanking signal of the beam to control an exposure time. Thereby the compensation of a proximity effect can be performed effectively without requiring a large amount of calculation processing and a long time of calculation even when processing conditions for a resist or the like are altered.
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