| 摘要 |
PURPOSE:To obtain an epitaxial film having high quality and low impurity concentration by specifying thec content of a metallic impurity in aluminum nitride in a coating layer. CONSTITUTION:In a susceptor for the vapor growth of a semiconductor in which the upper section of a carbon base material is coated with crystalline aluminum nitride precipitated from the vapor phase, the quantity of metallic impurities is brought to 10ppm or less, the content of Si and Ti to 3ppm or less in total and the content of Fe, Cr and Ni to 5ppm or less in total in the content of metallic impurities in aluminum nitride in a coating layer. When GaAs is grown in an epitaxial manner by using the susceptor, an epitaxial film of impurity concentration of 3X10<14>atoms/cm<3> or less is acquired stably.
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