| 摘要 |
PURPOSE:To observe with facility and accuracy the working conditions of an observation node by using a strobe SEM by a method wherein an observing metal pad is formed in the topmost layer of a multilayer interconnection structure and the observing metal pad is connected to the observation node. CONSTITUTION:An observing cell 3 to be connected to an observation node is constituted of a CMOS consisting of MOS transistors 50, 51 and an observing metal pad 31. The metal pad 31 is built in the layer that is the topmost layer of a multilayer interconnection structure. The observing metal pad 31 is built in the second layer, with the wiring for the semiconductor integrated circuit device being of a two-layer structure. The connection between the observation node and the observing cell 3 is established when a wiring 32a is connected to the observation node. A wiring 32b is connected to an operating power source +V and a wiring 31c is grounded. In this way, even when an observation node is positioned in a semiconductor integrated circuit device lower layer, the potential of the observation node may be determined with ease and high accuracy with help of a strobe SEM.
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