发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To stabilize the threshold characteristic of a MOS transistor (TR) by applying a power voltage of the pre-stage of a back gate of a CMOS TR receiving an output of the circuit of pre-stage different in power voltage. CONSTITUTION:The operating power voltage of the pre-stage circuit is applied to a linear circuit section 2 having a larger operating power voltage than that of the CMOS circuit 1 and a back gate of a CMOS TR M1 of an interface circuit section 3 interfacing with the CMOS circuit 1. Thus, the production of the polarization of the residual component is prevented to a gate insulation film of a MOS TR and the threshold characteristic of the MOS TR is made stable to stabilize the input operation.
申请公布号 JPS62123826(A) 申请公布日期 1987.06.05
申请号 JP19850262426 申请日期 1985.11.25
申请人 HITACHI LTD 发明人 HAIJIMA MIKIO
分类号 H01L27/092;H01L21/8238;H03F3/34;H03F3/345;H03F3/347;H03K19/003;H03K19/0185 主分类号 H01L27/092
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