| 摘要 |
PURPOSE:To reduce the number of manufacturing processes by a method wherein the common processes among the manufacturing processes of a plurality of elements which are formed on a same substrate and have different conductivity types are carried out simultaneously. CONSTITUTION:N-type buried layers 2 are formed in a P-type silicon substrate 1 and N-type silicon layers 3 are formed on the layers 2 by epitaxial growth. Then boron ions are implanted to form insulating regions and a plurality of semiconductor islands are isolated. Then, after a selective oxide film 5 is formed, a gate oxide film is formed on the region which is to be a P-type channel MOS transistor and, after a base region 7 is formed on the region which is to be a bipolar transistor, the oxide film is removed. Then, after a polycrystalline silicon layer is formed over the whole surface and selectively oxidized, an oxidation resistant film on a collector electrode part is removed and the polycrystalline silicon layer is doped with an impurity. After that, borons are implanted into diffused layers 13 and a base electrode 11. |
