| 摘要 |
PURPOSE:To improve the conductivity of a metal oxide semiconductor by using jointly sulfoxylic acid salt derivatives which show a reducing property, with the metal oxide semiconductor. CONSTITUTION:The conductive substrate body is used jointly the sulfoxylic acid salt derivatives with the metal oxide semiconductor. As the concrete example of the sulfoxylic acid salt derivatives, the derivatives shown by the formula is used. The compounding ratio of the sulfoxylic acid salt derivatives to the metal oxide semiconductor is preferably <=20pts.wt, further preferably 0.001-5 pts.wt. on the basis of 100pts.wt the metal oxide semiconductor. The method of using jointly the sulfoxylic acid salt derivatives with the metal oxide semiconductor lies in directly contacting the sulfoxylic acid salt derivatives with the surface of the metal oxide semiconductor, thereby absorbing said derivatives to said surface of the metal oxide semiconductor. |
