| 摘要 |
PURPOSE:To improve the read speed of an information from a ROM without requiring a pull-up transistor by forming the ROM by grounding the common drain or both the gates of a PMOS and an NMOS which constitute a RAM. CONSTITUTION:Data are forcibly written in a RAM by providing a wiring 20 or a wiring 21 for a PMOS 2, an NMOS 4 during part of a manufacturing process. If the wiring 20 is provided, a low level is always read on a digit wire 12 and if the wiring 21 is provided, the PMOS 2 is always made an ON state and a high level can always be read on the digit wire 12. This requires no pull-up transistor and the read speed of an information from a ROM is improved. |
