| 摘要 |
PURPOSE:To increase a light absorptance, increase a short-circuit current, improve a curve factor and improve photoelectric conversion efficiency by a method wherein a conductive electrode is formed on a substrate and fine unevenness is provided on its surface opposite to the substrate. CONSTITUTION:Indium-titanium oxide ITO is deposited on a metal substrate 11 made of stainless steel or the like to form a conductive layer 21 and fine unevenness is provided on its surface by a method such as varying evaporating time. In the same way, a buffer layer 22 made of tin oxide SnO2 is formed on the layer 21 to form a conductive electrode 12 of a double-layer composition. A P-type amorphous silicon layer 13, an I-type amorphous silicon layer 14 and an N-type amorphous silicon layer 15 are successively laminated on the electrode 12 as photoelectric converting layers and a transparent conductive layer 16 made of indium-tin oxide or the like and upper electrodes 16a and formed. |
