| 摘要 |
A rapid thermal anneal (RTA) can substantially improve the quality of heteroepitaxial structures such as dielectrics on semiconductors, semiconductors on metal on semiconductor (e.g., Si/CoSi2/Si), semiconductor on semiconductor (e.g., GaAs/Si, and SixGe1-x/Si), or semiconductor on insulator (e.g., Si/Al2O3). The RTA involves heating a heterostructure, comprising a single crystal first material substrate with a layer of second material thereon, to an absolute temperature Ta2 for a time ta2, where typically 0.75 Tm2 < Ta2 < Tm2 and 1 < ta2 < 60 seconds, Tm2 being the absolute melting temperature of the second material. The method can produce substantial improvement in such indicators of crystalline perfections as RBS ratio chi min or carrier mobility mu . |
