发明名称 |
METHOD OF MAKING COMPLEMENTARY METAL OXIDE SEMICONDUCTOR STRUCTURES |
摘要 |
A simple process is provided for making a planar CMOS structure wherein isolation regions required by bulk CMOS structures are first formed, an N channel device field region is self-aligned to an N well region in a semiconductor substrate and a refractory material is twice defined for forming P and N channels, the first definition masking P channel source and drain regions while defining the N channel and the second definition defining the P channel while using a photoresist layer to mask the N channel. In the process, a technique which uses a single mask level defines the well region and self-aligns the necessary field doping to the well region to provide closely spaced N and P channel devices. |
申请公布号 |
DE3371264(D1) |
申请公布日期 |
1987.06.04 |
申请号 |
DE19833371264 |
申请日期 |
1983.10.11 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COTTRELL, PETER EDWIN;GEIPEL, HENRY JOHN, JR.;KENNEY, DONALD MCALPINE |
分类号 |
H01L27/08;H01L21/762;H01L21/8238;H01L29/78;(IPC1-7):H01L21/82;H01L21/00;H01L21/76 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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