| 摘要 |
PURPOSE:To obtain a long-life sensor with a better sensitivity and a wide applicable range, by including first and second semiconductor substrates directly junctioned through an oxide film, a channel region formed on the first semiconductor substrate, a groove formed with source and drain regions formed to be partially exposed and a contact pad and the like. CONSTITUTION:First and second semiconductor substrates 41 and 42 are junctioned directly through oxide films 43. Source and drain regions 47 and 48 are formed in the substrate 41. Subsequently, a groove 45 is made to pierce the substrate 42 and channel region 49 and regions 47 and 48 formed in the substrate 41 are formed to be partially exposed. Insulation films 53 serving as gate insulation film 52 and passivasion film are formed in areas 47 ad 48 exposed in the groove 45, on the surface of the channel area 49, on the inner surface of the groove 45 of the substrate 42 and on the surface of the substrate 41 opposite to the junctioned surfaces. Then, contact pads 54 and 55 are connected to the areas 47 and 48 through an opening provided on the insulation film on the surface opposite to the junctioned surfaces of the substrate 41. |
