| 摘要 |
PURPOSE:To prevent the width of an electrode element at the outermost part of a comb-line electrode after the photolithography processing from being made thin by forming a mask pattern of the electrode element of the outermost part of the comb-line electrode wider than the mask pattern of the electrode element of then other part. CONSTITUTION:The mask pattern of the electrode element at the outermost part having a largest diffraction of light is formed widely from a mask pattern 10 due to the interference of light at exposure among electrode elements 6A, 6B, 7A, 7B of comb-line electrodes 3, 4 of the surface wave element 1. Thus, much light is diffracted from the peripheral side of the mask pattern of the wider electrode element at the outermost part at the exposure of the photolithography processing. Thus, the electrode element of the outermost part is formed nearly the same width to that of the electrode elements other than the outermost part finally and the surface wave element having the comb-line electrodes where the width of all the electrode elements is equal is obtained.
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