| 摘要 |
PURPOSE:To prevent the electric characteristics of semiconductor device from deteriorating by a method wherein a monitoring via hole passing through a semiconductor substrate but not covered with the first interconnection electrode is provided. CONSTITUTION:A first via hole 106a passing through a GaAs substrate 101 and a second via hole 106b for monitoring are made in the part near a grounding source electrode 104s out of various electrodes provided on the GaAs semiconductor substrate 101. Furthermore, the first interconnection electrode 11 with etching speed markedly slow during anisotropical etching process is provided covering the opening on one side main surface of the via hole 106a. Besides, the second interconnection electrode 12 connecting to the source electrode 106a is provided on the first interconnecting electrode 11. Finally grounding electrodes connecting to the interconnecting electrode 11 are provided on the backside of GaAs substrate 101 and on the sides of via hole 106a.
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