| 摘要 |
<p>The process includes the steps of forming a trench or groove in a semiconductor substrate (10, 12) through a surface (14) thereof, depositing an organic or other filling material (20, 22) on the surface of the substrate and into the trench, forming a block (26) of material over the trench on the filling material so as to extend a given distance over the surface of the substrate, etching the filling material with a given etchant so as to remove the filling material disposed over the surface of the substrate until only a segment (28) of the filling material remains over the trench and above the surface of the substrate, forming a layer of material (30) over the surface (14) of the semiconductor substrate so as to cover the segment (28) of the filling material, with the layer of material (30) and the filling material (28) having similar etch rates, and etching simultaneously the layer of material and the segment of the filling material until all of the layer of material is removed from the surface of the semiconductor substrate. </p> |
