| 发明名称 |
STRUTTURA DI CIRCUITO INTEGRATO A SEMICONDUTTORI AVENTE CONDUTTORI ISOLATI |
| 摘要 |
Insulation between first and second levels of aluminum metallization in semiconductor integrated circuit structures comprises a phosphorus-rich, plasma planarized, deposited silicon dioxide layer (14) and a phosphorus-poor layer of silicon dioxide (15) deposited upon said phosphorus-rich layer. |
| 申请公布号 |
IT1170132(B) |
申请公布日期 |
1987.06.03 |
| 申请号 |
IT19830020700 |
申请日期 |
1983.04.20 |
| 申请人 |
WESTERN ELECTRIC CO. INC. |
发明人 |
LEVINSTEIN HYMAN JOSEPH;POWELL JR. WILLIAM DAVID;ASHOK KUMAR SINHA |
| 分类号 |
H01L21/316;H01L23/532;(IPC1-7):H01L/ |
主分类号 |
H01L21/316 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
