BIPOLAR TRANSISTOR INTEGRATED CIRCUIT

摘要

PURPOSE:To improve the performance of ECL without variations sufficiently reducing the emitter resistance of switching transistors by a method wherein a third transistor is arranged adjoining a first and a second transistors in the orthogonal direction to the arrayal direction of the latters. CONSTITUTION:A third transistor Qc for power supply is formed into a rectangular pattern adjoining a first and a second transistors Qa, Qb in the orthogonal direction to the arrayal direction of the latters. These transistors are composed of GaAs or AlGaAs wafers epitaxially grown into multiple layers on a semiinsulating GaAs substrate 1. The epitaxial wafers thus grown are used to form P<+> type outer base layers 6(6a-6c) by Mg ion implantation to be element-separated later. Finally an element-separated insulating layer 91 reaching the substrate 1 is formed by H<+> ion implantation while another element- separated insulating layer 92 reaching the first semiconductor layer 2 is formed by B<+> ion implantation.