| 摘要 |
PURPOSE:To obtain a solid-state image pickup element characterized by excellent characteristics and simple manufacturing processes, by providing a sensor, which performs photoelectric conversion, on a flat transparent substrate, and transferring electric charge, which is formed in a sensor that is formed separately on every picture element. CONSTITUTION:A flat glass plate 1 is prepared. A transparent conductor film 2 is deposited on the upper surface of the plate 1. Then, a non-added N-type amorphous silicon hydride layer 3 is deposited. An electrode layer is attached by sputtering and evaporation. A part of the electrode layer is etched away, and an electrode 4 is formed. The a-Si:H layer 3 directly beneath the patterned part of a resist pattern is etched away. Thus a light conducting layer is completely isolated by prooves 5 for every picture element in a space. A sensor part, which performs photoelectric conversion, is formed by these elements 2, 3 and 4. Since the flat glass plate is used and the most sensitive sensor part can be formed on the plate, the manufacturing processes are easy, and the characteristics become excellent. |
