| 摘要 |
PURPOSE:To precisely evaluate a memory RAM by impressing a bias voltage through a switching FET so as to change the capacity of an information memory MOS. CONSTITUTION:When a signal L is impressed on the gate of the switching FET Q58 in a voltage generator circuit through a probe electrode P1, the FET Q58 is turned off. Then a desired bias voltage is supplied through an other electrode P2, and the capacity of the information memory MOS freely changes. A RAM cell with characteristic variance is evaluated in the most suitable way, and the memory RAM can be precisely evaluated.
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