| 摘要 |
PURPOSE:To prepare a semiconductor substrate having no unbonded portion with an excellent yield, by bonding a plurality of silicon single crystal substrates with the interposition of a silicon oxide layer containing O-H coupling. CONSTITUTION:When there is O-H coupling in a silicon oxide layer on the occasion of contact of substrates with each other, O-H radicals pull against each other due to the coupling force of hydrogen and thereby the substrates are made to contact closely with each other. On the occasion, the O-H coupling can be regarded as hydroxyl radical on the surface of the oxide layer. Said force is strong considerably, and the strength is so large that the substrates once made to contact closely with each other can not be separated even before they are heated, for instance. Thus, it puts silicon substrates in elastic deformation and can make two substrates contact closely throughout the surfaces thereof not withstanding the presence of warp or sinuosity. When the substrates thus contacting with each other throughout the surfaces are heated, a dielectric- separated substrate having no unbonded portion can be obtained.
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