| 摘要 |
Process for making garnet films of the composition R3-x, Bix, Fe5-y, My, O12, where R = Ca or at least a rare earth metal, M = Al, Ga, Si and/or Ge, 0 </= x </= 1.8, 0 </= y </= 1.2, in which a target is used which contains the elements involved in the layer construction in the form of their oxides in a concentration corresponding to the desired layer composition with bismuth oxide in excess, HF voltages being applied to the target electrode and to the substrate electrode in a manner such that >/=90% of the HF power drawn from the HF generator and required for the sputtering process is fed to the plasma via the target electrode and </=10% of the HF power required for the sputtering process via the substrate electrode. The particular advantages of the present process are that, despite the substantially higher sputtering yield of bismuth oxide in the deposited layer compared with the other components in the layer, a specified layer composition can be reproducibly achieved, the deposited layers having a high homogeneity over the entire layer thickness. The high deposition rate achievable with this method is very advantageous in regard to an efficient manufacture. |
