Hetero-junction bipolar transistor having a high switching speed

摘要

The bipolar transistor comprises an emitter of a first semiconductor, a base of a second semiconductor and a collector of a third semiconductor, the first semiconductor having edges of conduction and valence bands positioned outside the energy band gap of the second semiconductor, and the third semiconductor having an edge of conduction band for majority carriers positioned inside the energy band gap of the second semiconductor and an edge of valence band for majority carriers positioned outside the energy band gap of the second semiconductor.