发明名称 SEMICONDUCTOR ACCELERATION SENSOR
摘要 PURPOSE:To obtain a sufficient sensitivity even if a cantilever is made thin and also a weight is made small, by forming the cantilever by a multilayer film having an alkali etching resistance. CONSTITUTION:A cantilever 14 is formed by a multilayer film having an alkali etching resistance on the surface of an Si single crystal substrate 11. For instance, a triple layer film is formed by placing a nitride film (Si3N4) 141 and 142 on the upper and the lower sides of a polysilicon film 143. Also, a strain detector is constituted of a piezo-resistance 13 which is formed in the vicinity of a supporting part of the cantilever 14. Since the cantilever 14 is formed by a laminated film, its thickness accuracy can be set exactly irrespective of the accuracy of the substrate 11. Accordingly, a cantilever whose thickness is extremely thin can be realized, and even if an Si weight is made light, a sufficient sensitivity can be obtained.
申请公布号 JPS62121367(A) 申请公布日期 1987.06.02
申请号 JP19850261301 申请日期 1985.11.22
申请人 NISSAN MOTOR CO LTD 发明人 HOSHINO SHIGEO
分类号 G01P15/12 主分类号 G01P15/12
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