Method for diffusing a semiconductor substrate through a metal silicide layer by rapid heating

摘要

A method for forming a diffused region on a semiconductor substrate is provided. A silicide layer is formed in a region of a substrate where a diffused layer is to be formed and a material containing an impurity to be defined into the substrate deposited on the silicide layer. The device is heat treated to cause the impurity to diffuse through the silicide layer into the substrate. The method may be used to produce a MOSFET.