| 摘要 |
PURPOSE:To increase the yield and decrease the chip size by discriminating the surface heights, by locating (mask fitting) by the standards of this difference in level to form accurate patterns. CONSTITUTION:On a base plate 1 are formed a high-pressure resist transistor with a collector 5, a base 6, an emitter 7 and a low-pressure resist (small signal) transistor with a collector 21, a base 61, an emitter 71, electrically separated from each other by an isolation area 4. The surface height of areas 6, 7 are lower than that of areas 61, 71. With the difference of surface height between areas 6, 7 and areas 61, 71, the level difference part 8 becomes the standard for location (mask fitting) for area 4 or 5. |
