| 摘要 |
PURPOSE:To improve operating characteristics by forming a gate electrode, a source electrode, a drain electrode and a light shielding film in a self-aligning manner to eliminate the superposition of the shielding film and source, drain electrodes, thereby reducing an electrostatic capacity. CONSTITUTION:A first resist mask 61 is formed in the same shape as a gate electrode 2 by exposing from a substrate 1 side, an insulating film 5 is removed from source, drain regions, and an N-type hydrogenated amorphous silicon film 71 and ITO film 7 for source, drain electrodes are formed. The mask 61 is removed, the films 71, 7 are removed from the region corresponding to the electrode 2, and a light transmission insulating film 8 for an interlayer insulating film is formed. A negative type resist film is formed, exposed to form a second resist mask 91 having a hole at the opposed region of the electrode 2, and an opaque conductive film 10 is formed. The mask 91 is removed, and the film 10 remains only on the region corresponding to the electrodes 2 as a light shielding film 11. The third resist masks 12 for covering a gate region and the source, drain regions are formed, the films 8, 7, 71, 4 are removed to separate the source and the drain, electrodes 13, 14 are formed, and the mask 12 is removed. |
